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2N964A - PNP germanium epitaxial mesa transistor

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2N964 PNP germanium epitaxial mesa transistors
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2N964 (GERMANIUM) For Specifications, See 2N960 Data. 2N964A (GERMANIUM) PNP germanium epitaxial mesa transistor for high- speed switching applications. CASE 22 (TO-18) Collector Connected to Case MAXIMUM RATINGS Rating Collector-Emitter Voltage Symbol Value Unit VCEO 7.0 Vdc Collector-Base Voltage VCB 15 Vdc Emitter-Base Voltage VEB 2.5 Vdc Collector Current IC 100 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation@ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case PD 150 mW 2.0 mW/oC PD 300 mW 4.0 mW;oC TJ,Tstg -65 to +100 °c Symbol 8JC Max Unit 0.25 °C/mW Thermal Resistance, Case to Ambient 8CA 0.
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