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2N4283 - PNP germanium power transistors

Download the 2N4283 datasheet PDF. This datasheet also covers the 2N4276 variant, as both devices belong to the same pnp germanium power transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N4276-Motorola.pdf) that lists specifications for multiple related part numbers.

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2N4276 (GERMANIUM) thru 2N4283 PNP germanium power transistors designed for high current applications requiring high-gain and low saturation voltages. CASE 3A (TO-3 modified) CASE 161 (TO-41) For units with lugs attached, specify devices MP4276 etc. (TO-41 package) MAXIMUM RATINGS Rating Collector-Emitter Voltage Symbol VCEO 2N4276 2N4278 2N4280 2N4282 2N4277 2N4279 2N4281 2N4283 20 30 45 60 Collector-Emitter Voltage VCES 30 45 60 75 Collector-Base Voltage VeB 30 45 60 75 Emitter-Base Voltage VEB 20 25 30 40 Collector Current - Continuous * Total Device Dissipation @ TC =' 25° C Derate above 25°C Ope rating and Storage Junction Temperature Range I IC• PD • • TJ • Tstg • 60 170 2.
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