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2N3839 - HIGH FREQUENCY TRANSISTOR

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2N2857 2N3839 2N2857 JAN, JTX, JTXV AVAILABLE CASE 20-03, STYLE 10 TO-72 (TO-206AF) HIGH FREQUENCY TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation T/ = 25°C Derate above 25°C @Total Device Dissipation Trj = 25°C Derate above 25°C Storage Temperature Symbol vCEO VCBO VEBO 'C PD Pd Tsta Value 15 30 2.5 40 200 1.14 300 1.72 - 65 to + 200 Unit Vdc Vdc Vdc mAdc mW mW/°C mW mW/°C °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage* dC = 3.0 mAdc, Ib = 0) Collector-Base Breakdown Voltage
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