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2N3553
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
@Total Device Dissipation Tc = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Symbol vCEO vCBO v EBO
•c
p D.
TJ< Tstg
Value 40 65 4.0
1.0 7.0
40 -65 to +200
Unit Vdc Vdc Vdc
Adc Watts
mwrc
°c
JAN, JTX, JTXV AVAILABLE CASE 79-02, STYLE 1
TO-39 (TO-205AD)
HIGH FREQUENCY TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.;
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage(1)
OC = 200 mAdc, Ib = 0)
Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, Iq = 0)
Collector Cutoff Current
(Vce = 30 Vdc, Bl = 0)
— —vCEO(sus)
40
Vdc
— —v(BR)EBO
4.
2N3553 Datasheet
