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2N3468 - SWITCHING TRANSISTOR

Download the 2N3468 datasheet PDF. This datasheet also covers the 2N3467 variant, as both devices belong to the same switching transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N3467-Motorola.pdf) that lists specifications for multiple related part numbers.

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MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation TA = 25°C Derate above 25°C @Total Device Dissipation Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol 2N3467 2N3468 v CEO VCBO 40 40 50 50 VEBO 5.0 ic 1.0 PD 1.0 5.71 Pd TJ- Tstg 5.0 28.6 - 65 to + 200 Unit Vdc Vdc Vdc Adc Watt mW/°C Watts mW/°C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Symbol Rwc RftJA Max 35 0.175 Unit °C/W X/mW 2N3467 2N3468 JAN, JTX, JTXV AVAILABLE CASE 079-02, STYLE 1 TO-39 (TO-205AD) SWITCHING TRANSISTOR PNP SILICON ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.
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