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2N3308 - GENERAL PURPOSE TRANSISTOR

Download the 2N3308 datasheet PDF. This datasheet also covers the 2N3307 variant, as both devices belong to the same general purpose transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N3307-Motorola.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
2N3300 GENERAL PURPOSE TRANSISTOR
2N3301 GENERAL PURPOSE TRANSISTOR
2N3302 GENERAL PURPOSE TRANSISTOR
2N3303 NPN silicon annular transistor
2N3304 PNP silicon annular transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation Ta = 25°C Derate above 25°C @Total Device Dissipation Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol 2N3307 2N3308 vCEO V CES VCBO 35 40 40 25 30 30 VEBO 'C PD 3.0 50 200 1.14 pd TJ. Tstg 300 1.71 - 65 to + 200 Unit Vdc Vdc Vdc Vdc mAdc mW mW/°C mW mW/°C °C 2N3307 2N3308 CASE 20, STYLE 10 TO-72 (TO-206AF) GENERAL PURPOSE TRANSISTOR PNP SILICON ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage . (Ic = 2.