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2N3298 - NPN silicon annular transistor

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2N3298 (SILICON) CASE 22 (TO.IS) NPN silicon annular transistor for power oscillator applications to 150 MHz. Collector connected to ces. MAXIMUM RATINGS Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Device Dissipation (25°C Case Temperature) Derate Above 25°C Total Device Dissipation (25°C Ambient Temperature) Derate Above 25°C 2mW/oC Junction Temperature Storage Temperature Range Symbol VCB VCES VEB IC PD PD TJ Tstg Value 25 25 3.0 100 1.0 6.67 0.3 2.0 +175 -65 to +175 Unit Vdc Vdc Vdc mA Watt mWrC Watt mW/oC °c °c 80 MHz OSCILLATOR POWER OUTPUT TEST CIRCUIT 16K RFC 2N3298 15 pF 2.7K 12 pF ~ R' SOU BOLOMETER l, - 4 TURNS #22 WIRE ON 'I•• COIL FORM -12V o-----e----..JV'.2.0U,.,..---....
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