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3081 2N
(SIUCON)
PNP SILICON ANNULAR TRANSISTOR
· .. designed for medium-speed switching and general-purpose amplification applications in industrial service.
• High Collector-Base Breakdown Voltage BVCBO = 70 Vdc (Min) @ IC = 10 /LAdc
• Low Collector-Emitte'r Saturation Voltage VCE(sat) = 0.3 Vdc (Max) @ IC = 150 mAdc
PNPSILICON TRANSISTOR
*MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Ba.. Voltage Emitter-Base Voltage Collector Current - Continuous Total Oeviee Dissipation@TA - 25°C
Derate above 25°C Total Device Dissipation@Tc-250C
Derate above 25°C Storage Temperature Range
·'ndicates JEOEC Registered Data.
Symbol VCEO VCB VEB
IC
Po
Po
Tstg
Value
50 70 6.0 600 0.6 3.4 2.0 11.
2N3081 Datasheet
