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2N2256 - NPN silicon and PNP germanium mesa complementary transistors

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
2N2257 NPN silicon and PNP germanium mesa complementary transistors
2N2258 NPN silicon and PNP germanium mesa complementary transistors
2N2259 NPN silicon and PNP germanium mesa complementary transistors
2N2212 PNP GERMANIUM POWER TRANSISTORS
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2N2256, 2N2257 (SILICON) 2N2258 {GERMANIUM} 2N2259 (GERMANIUM) CASE 22 (TO-18) Collector connected to cese NPN silicon and PNP germanium mesa complementary transistors for high- speed non- saturated switching applic ations. MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and storage Junction Temperature Range Symbol VCEO VCB VEB IC PD PD 2N2256 2N2257 7.0 7.0 1.0 100 300 2.0 1000 6.67 TJ , Tstg -65 to +175 2N2258 2N2259 7.0 7.0 1.0 100 150 2.0 300 4.
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