Datasheet4U Logo Datasheet4U.com

2N1175 - PNP Transistor

Download the 2N1175 datasheet PDF. This datasheet also covers the 2N1413 variant, as both devices belong to the same pnp transistor family and are provided as variant models within a single manufacturer datasheet.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N1413-Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
2N1131 LOW POWER PNP SILICON TRANSISTOR Microsemi
2N1131 SILICON PNP TRANSISTOR Central Semiconductor
2N1131L LOW POWER PNP SILICON TRANSISTOR Microsemi
2N1132 LOW POWER PNP SILICON TRANSISTOR Microsemi
2N1132 SILICON PLANAR PNP TRANSISTOR TT

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
2N1100 PNP germanium power transistors
2N1120 PNP germanium power transistor
2N1131 PNP SILICON ANNULAR TRANSISTORS
2N1131A PNP SILICON ANNULAR TRANSISTORS
2N1132 SWITCHING TRANSISTOR

Full PDF Text Transcription

Click to expand full text
2N1413thru 2N1415 (GERMANIUM) 2Nl175 CASE 31(1) (TO-5) Base connected to case PNPgermaniumtransistorsfor general-purpose lowfrequency amplifier and switching applications. Characteristic curves similar to 2N524-2N527 series. MAXIMUM RATINGS Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Junction and Storage Temperature Power Dissipation at 25°C Ambient Symbol VCB VCEO VEB IC Tj & Tstg Po Value 35 25 10 500 -65 to +100 225 Unit Vdc Vdc Vdc mAdc °C mW ELECTRICAL CHARACTERISTICS· (TA; 250 C unless otherwise noted) Characteristics Collector Cutoff Current VCB ; 30 Vdc, IE; 0 Emitter Cutoff Current VEB ; 10 Vdc, IC ; 0 Collector-Emitter Voltage IC; 0.
Published: |