Download 1N5825 Datasheet PDF
Motorola Semiconductor
1N5825
features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free-wheeling diodes, and polarity-protection diodes. - Extremely Low v F - High Surge Capacity - Low Stored Charge, Majority - TX Version Available - Carrier Conduction Low Power Loss/ High Efficiency Designer's Data for ~'Worst Case" Conditions The Designers Data sheets permit the design of most circuits entirely from the information presented. Limit curves - representing boundaries on device characteristics - are given to facilitate "worst case" design. SCHOTTKY BARRIER RECTIFIERS 5 AMPERE 20.30.40 VOLTS "MAXIMUM RATINGS Rating Symbol 1N5823 1 N5824 1N5825 M8R5825H, H1 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Non~Repet;tjve Peak Reverse Voltage RMS Reverse Voltage Average Rectified Forward Current VR(equiv)'; 0.2 VR (dc), TC = 75°C VR(equiv)'; 0.2 VR (dc), TL =...