MJ11017 - 30 AMPERE DARLINGTON POWER TRANSISTORS

Motorola Semiconductor (now NXP Semiconductors)

Datasheet Details

Part number	MJ11017
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	235.08 KB
Description	30 AMPERE DARLINGTON POWER TRANSISTORS
Datasheet	MJ11017 Datasheet

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number	Description
MJ11012	30 AMPERE DARLINGTON POWER TRANSISTORS
MJ11013	30 AMPERE DARLINGTON POWER TRANSISTORS
MJ11014	30 AMPERE DARLINGTON POWER TRANSISTORS
MJ11015	30 AMPERE DARLINGTON POWER TRANSISTORS
MJ11018	30 AMPERE DARLINGTON POWER TRANSISTORS
MJ1000	Medium-Power Complementary Silicon Transistors
MJ10000	20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS
MJ10005	20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS
MJ10007	10 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS
MJ10009	20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ11017/D Complementary Darlington Silicon Power Transistors . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. • High dc Current Gain @ 10 Adc — hFE = 400 Min (All Types) • Collector–Emitter Sustaining Voltage VCEO(sus) = 150 Vdc (Min) – MJ11018, 17 VCEO(sus) = 250 Vdc (Min) – MJ11022, 21 • Low Collector–Emitter Saturation VCE(sat) = 1.0 V (Typ) @ IC = 5.0 A VCE(sat) = 1.8 V (Typ) @ IC = 10 A • Monolithic Construction • 100% SOA Tested @ VCE = 44 V, IC = 4.0 A, t = 250 ms.