Click to expand full text
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BF844/D
High Voltage Transistor
NPN Silicon
COLLECTOR 3 2 BASE 1 EMITTER
BF844
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 400 450 6.0 300 625 5.0 1.5 12 – 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C Watt mW/°C °C
1 2 3
CASE 29–04, STYLE 1 TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.
BF844 Datasheet
