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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BF720T1/D
NPN Silicon Transistor
COLLECTOR 2,4 BASE 1 EMITTER 3
BF720T1
Motorola Preferred Device
NPN SILICON TRANSISTOR SURFACE MOUNT
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation up to TA = 25°C Storage Temperature Range Junction Temperature Symbol VCEO VCBO VCER VEBO IC PD Tstg TJ Value 300 300 300 5.0 100 1.5 – 65 to +150 150 Unit Vdc Vdc Vdc Vdc mAdc Watts °C °C
1 2 3
4
CASE 318E-04, STYLE 1 SOT–223 (TO-261AA)
DEVICE MARKING
DC
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance from Junction-to-Ambient(1) Symbol RθJA Max 83.
BF720T1 Datasheet
