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SRAF08100 - Dual Schottky Barrier Power Rectifiers

Features

  • epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.
  • Low Forward Voltage.
  • Low Switching noise.
  • High Current Capacity.
  • Guarantee Reverse Avalanche.
  • Guard-Ring for Stress Protection.
  • Low Power Loss & High efficiency.
  • 125 Operating Junction Temperature.
  • Low Stored Charge Majority Carrier Conduction.
  • Plastic Material.

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Datasheet Details

Part number SRAF08100
Manufacturer Mospec Semiconductor
File Size 260.52 KB
Description Dual Schottky Barrier Power Rectifiers
Datasheet download datasheet SRAF08100 Datasheet

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Other Datasheets by Mospec Semiconductor

Part Number Description
SRAF0830 (SRAF0830 - SRAF0860) Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers
SRAF0835 (SRAF0830 - SRAF0860) Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers
SRAF0840 (SRAF0830 - SRAF0860) Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers
SRAF0845 (SRAF0830 - SRAF0860) Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers
SRAF0850 (SRAF0830 - SRAF0860) Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers

Full PDF Text Transcription

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MOSPEC SRAF0870 thru SRAF08100 Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. * Low Forward Voltage. * Low Switching noise. * High Current Capacity * Guarantee Reverse Avalanche. * Guard-Ring for Stress Protection. * Low Power Loss & High efficiency. * 125 Operating Junction Temperature * Low Stored Charge Majority Carrier Conduction.
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