Datasheet4U Logo Datasheet4U.com

SR108 - SCHOTTKY BARRIER RECTIFIERS

Datasheet Summary

Features

  • epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. Features ＊Low Forward Voltage. ＊Low Switching noise. ＊High Current Capacity ＊Guarantee Reverse Avalanche. ＊Guard-Ring for Stress Protection. ＊Low Power Loss & High efficiency. ＊150℃ Operating Junction Temperature ＊Low Stored Charge Majority Carrier Conduction. ＊Plastic Material used Carries Underwriters Laborat.

📥 Download Datasheet

Datasheet preview – SR108

Datasheet Details

Part number SR108
Manufacturer Mospec Semiconductor
File Size 145.15 KB
Description SCHOTTKY BARRIER RECTIFIERS
Datasheet download datasheet SR108 Datasheet
Additional preview pages of the SR108 datasheet.

📁 Similar Datasheet

  • SR108 - 1A SCHOTTKY BARRIER RECTIFIERS (Frontier Electronics)
  • SR108 - 1.0 AMP. SCHOTTKY BARRIER RECTIFIERS (Jinan Gude Electronic Device)
  • SR108 - 1 Amp Schottky Barrier Rectifier 50 - 100 Volts (Micro Commercial Components)
  • SR1080 - SCHOTTKY BARRIER RECTIFIER (JINAN JINGHENG)
  • SR1080 - Schottky Barrier Rectifiers (GME)
  • SR1080C - SCHOTTKY BARRIER RECTIFIER (Shunye)
  • SR1080C - SCHOTTKY BARRIER RECTIFIER (RECTRON)
  • SR1080CT - SCHOTTKY BARRIER RECTIFIER (MIC)
  • SR1080CT - Dual Schottky Rectifiers (GME)
  • SR1080CT - 10.0 AMP SCHOTTKY BARRIER RECTIFIERS (GW)
Other Datasheets by Mospec Semiconductor
  • SR10060L - Schottky Barrier Rectifiers
  • SR102 - SCHOTTKY BARRIER RECTIFIERS(1.0A /20-60V)
  • SR103 - SCHOTTKY BARRIER RECTIFIERS(1.0A /20-60V)
  • SR104 - SCHOTTKY BARRIER RECTIFIERS(1.0A /20-60V)
  • SR105 - SCHOTTKY BARRIER RECTIFIERS(1.0A /20-60V)
  • SR106 - SCHOTTKY BARRIER RECTIFIERS
  • SR107 - SCHOTTKY BARRIER RECTIFIERS
  • SR109 - SCHOTTKY BARRIER RECTIFIERS

Full PDF Text Transcription

Click to expand full text
MOSPEC SR107 Thru SR1100 Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. Features ＊Low Forward Voltage. ＊Low Switching noise. ＊High Current Capacity ＊Guarantee Reverse Avalanche. ＊Guard-Ring for Stress Protection. ＊Low Power Loss & High efficiency. ＊150℃ Operating Junction Temperature ＊Low Stored Charge Majority Carrier Conduction.
Published: |