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S20C80C - Schottky Barrier Power Rectifiers

Download the S20C80C datasheet PDF. This datasheet also covers the S20C70C variant, as both devices belong to the same schottky barrier power rectifiers family and are provided as variant models within a single manufacturer datasheet.

Features

  • epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.
  • Low Forward Voltage.
  • Low Switching noise.
  • High Current Capacity.
  • Guarantee Reverse Avalanche.
  • Guard-Ring for Stress Protection.
  • Low Power Loss & High efficiency.
  • 150 Operating Junction Temperature.
  • Low Stored Charge Majority Carrier Conduction.
  • Plastic Material.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (S20C70C-MospecSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number S20C80C
Manufacturer Mospec Semiconductor
File Size 60.71 KB
Description Schottky Barrier Power Rectifiers
Datasheet download datasheet S20C80C Datasheet

Full PDF Text Transcription

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MOSPEC S20C70C Thru S20C100C Schottky Barrier Power Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. * Low Forward Voltage. * Low Switching noise. * High Current Capacity * Guarantee Reverse Avalanche. * Guard-Ring for Stress Protection. * Low Power Loss & High efficiency. * 150 Operating Junction Temperature * Low Stored Charge Majority Carrier Conduction.
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