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S20C45CE - Schottky Barrier Rectifiers

Download the S20C45CE datasheet PDF. This datasheet also covers the S20C40CE variant, as both devices belong to the same schottky barrier rectifiers family and are provided as variant models within a single manufacturer datasheet.

Features

  • epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. ¡¯ ¡¯ ¡¯ ¡¯ ¡¯ ¡¯ ¡¯ ¡¯ ¡¯ Low Forward Voltage. Low Switching noise. High Current Capacity Guarantee Reverse Avalanche. Guard-Ring for Stress Protection. Low Power Loss & High efficiency. 150¢J Operating Junction Temperature Low Stored Charge Majority Carrier Conduction. Plastic Material used Carries Underwriter.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (S20C40CE_MospecSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number S20C45CE
Manufacturer Mospec Semiconductor
File Size 208.38 KB
Description Schottky Barrier Rectifiers
Datasheet download datasheet S20C45CE Datasheet

Full PDF Text Transcription

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www.DataSheet4U.com MOSPEC Schottky Barrier Rectifiers S20C30CE thru S20C60CE SCHOTTKY BARRIER RECTIFIERS 20 AMPERES 30-60 VOLTS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. ¡¯ ¡¯ ¡¯ ¡¯ ¡¯ ¡¯ ¡¯ ¡¯ ¡¯ Low Forward Voltage. Low Switching noise. High Current Capacity Guarantee Reverse Avalanche. Guard-Ring for Stress Protection. Low Power Loss & High efficiency. 150¢J Operating Junction Temperature Low Stored Charge Majority Carrier Conduction.
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