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PM200RSE060 - INTELLIGENT POWER MODULES

Features

  • C VCIN VD (all) U,V,W, (N) IC Fig. 5 OC and SC Test Fig. 6 OC and SC Test waveform P VD VCINP U,V,W Vcc VD VCINN N Ic VCINP 0V VCINN 0V t t tdead tdead tdead Fig. 7 Dead time measurement point example Sep. 2001 Free Datasheet http://www. datasheet4u. com/.

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MITSUBISHI MITSUBISHI MODULES> PM200RSE060 PM200RSE060 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM200RSE060 FEATURE a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process. For example, typical VCE(sat)=1.7V b) Using new Diode which is designed to get soft reverse recovery characteristics.
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