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MITSUBISHI
PM75CLB060
FLAT-BASE TYPE INSULATED PACKAGE
PM75CLB060
FEATURE
a) Adopting new 5th generation IGBT (CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is possible from all each conservation upper and lower arm of IPM. c) New small package Reduce the package size by 32%, thickness by 22% from S-DASH series. • 3φ 75A, 600V Current-sense IGBT type inverter • Monolithic gate drive & protection logic • Detection, protection & status indication circuits for, shortcircuit, over-temperature & under-voltage (P-Fo available from upper arm devices) • Acoustic noise-less 5.5kW/7.
PM75CLB060 Datasheet
