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RD60HUF1 - RF POWER MOSFET

General Description

RD60HUF1 is a MOS FET type transistor specifically designed for UHF High power amplifiers applications.

High power and High Gain: Pout>60W, Gp>7.7dB @Vdd=12.5V,f=520MHz High Efficiency: 55%typ.on UHF Band 2 3 10.0+/-0.3

Key Features

  • R1.6+/-0.15 0.1 -0.01 +0.05.

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MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD60HUF1 25.0+/-0.3 7.0+/-0.5 11.0+/-0.3 Silicon MOSFET Power Transistor 520MHz,60W DESCRIPTION RD60HUF1 is a MOS FET type transistor specifically designed for UHF High power amplifiers applications. OUTLINE DRAWING 1 24.0+/-0.6 4-C2 •High power and High Gain: Pout>60W, Gp>7.7dB @Vdd=12.5V,f=520MHz •High Efficiency: 55%typ.on UHF Band 2 3 10.0+/-0.3 FEATURES R1.6+/-0.15 0.1 -0.01 +0.05 APPLICATION For output stage of high power amplifiers in UHF Band mobile radio sets. 5.0+/-0.3 4.5+/-0.7 6.2+/-0.7 18.0+/-0.3 3.3+/-0.2 PIN 1.Drain 2.Source 3.