Datasheet4U Logo Datasheet4U.com

PM100DSA120 - Intelligent Power Module

Description

Mitsubishi Intelligent Power Modules are isolated base modules designed for power switching applications operating at frequencies to 20kHz.

Built-in control circuits provide optimum gate drive and protection for the IGBT and free-wheel diode power devices.

Features

  • ٗ Complete Output Power Circuit FPO SPR CP1 VPC VN1 FO C2E1 VCC TEMP OUT1 SR IN GND OUT2 SENS SINK ٗ Gate Drive Circuit ٗ Protection Logic.
  • Short Circuit.
  • Over Current.
  • Over Temperature.
  • Under Voltage FNO SNR CN1 VNC FO E2 Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K Inches 4.33 3.66±0.010 1.77 1.34 Millimeters 110.0 93.0±0.25 45.0 34.0 Dimensions L M N P Q R S T U Inches 0.47 0.33 0.28 0.230 0.22 Dia. M5 Metric 0.100 0.08 D.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PM100DSA120 Intelligent Power Module Powerex Power Semiconductors
PM1001 POWER MANAGEMENT UNIT AiT Semiconductor
PM1001Q20R POWER MANAGEMENT UNIT AiT Semiconductor
PM1001Q20VR POWER MANAGEMENT UNIT AiT Semiconductor
PM1008 High Q Chip Inductors BOURNS

Other Datasheets by Mitsubishi Electric

Part Number Description
PM100CLA060 Intelligent Power Module
PM100CSA060 Intelligent Power Module
PM100CSA120 Intelligent Power Module
PM100CSE120 Intelligent Power Module
PM100CVA060 Intelligent Power Module

Full PDF Text Transcription

Click to expand full text
MITSUBISHI INTELLIGENT POWER MODULES PM100DSA120 FLAT-BASE TYPE INSULATED PACKAGE A B G L C2E1 E2 C1 G G M U N 123 45 T - DIA. (4 TYP.) C 1234 5 P D N SIDE 1. VN1 2. SNR 3. CN1 4. VNC 5. FNO P SIDE 1. VP1 2. SPR 3. CP1 4. VPC 5. FPO Q - DIA. (2 TYP.) R - M5 THD. (3 TYP.) H P S S S S 0.64 MM SQ. PIN (10 TYP.) K J E F N VP1 VCC C1 TEMP OUT1 SR IN GND OUT2 SENS SINK Description: Mitsubishi Intelligent Power Modules are isolated base modules designed for power switching applications operating at frequencies to 20kHz. Built-in control circuits provide optimum gate drive and protection for the IGBT and free-wheel diode power devices.
Published: |