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MITSUBISHI IGBT MODULES
CM75BU-12H
HIGH POWER SWITCHING USE INSULATED TYPE
A B F E H E G R L
S(4 - Mounting Holes)
M GuP EuP D GvP EvP GuN EuN U V
C
TC Measured Point
GvN EvN
P
TC Measured Point
Q
4 - M4 NUTS
J E
J H K F G V T U N
L
TAB#110 t=0.5
V
W
X P
Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of four IGBTs in an H-Bridge configuration, with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.