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CM200DY-28H - IGBT Module

Description

Mitsubishi IGBT Modules are designed for use in switching applications.

Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode.

Features

  • ٗ Low Drive Power ٗ Low VCE(sat) ٗ Discrete Super-Fast Recovery Free-Wheel Diode ٗ High Frequency Operation ٗ Isolated Baseplate for Easy Heat Sinking.

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Full PDF Text Transcription

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MITSUBISHI IGBT MODULES CM200DY-28H HIGH POWER SWITCHING USE INSULATED TYPE A B F F G P C2E1 E2 C1 G2 E2 C D G1 E1 J P K N - DIA. (4 TYP.) M M Q - M6 THD (3 TYP.) R TAB#110 t=0.5 L E H M Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
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