YAT-1+ - Fixed Attenuator

Mini-Circuits

Download the YAT-1+ datasheet PDF. This datasheet also covers the YAT-1+-Mini variant, as both devices belong to the same fixed attenuator family and are provided as variant models within a single manufacturer datasheet.

General Description

YAT-1+ is a 1-dB absorptive attenuator fabricated using highly repetitive MMIC process including thin film resistors on GaAs substrate.

YAT-1+ attenuator die contains through-wafer Cu metallization vias to realize low thermal resistance and wideband operation.

Key Features

miniature package MCLP™ 2 x 2 mm.
wide bandwidth, DC-18 GHz.
excellent attenuation accuracy & flatness Typical.

📥 Download Datasheet

YAT-1+ fixed attenuator by Mini-Circuits - Datasheet Preview — Note: The manufacturer provides a single datasheet file (YAT-1+-Mini-Circuits.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	YAT-1+
Manufacturer	Mini-Circuits
File Size	244.00 KB
Description	Fixed Attenuator
Datasheet	YAT-1+ Datasheet

Other Datasheets by Mini-Circuits

Part Number	Description
YAT-0+	Fixed Attenuator
YAT-0-D	Fixed Attenuator Die

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Microwave Precision Fixed Attenuator 50Ω 2W 1dB DC to 18 GHz Product Features • miniature package MCLP™ 2 x 2 mm • wide bandwidth, DC-18 GHz • excellent attenuation accuracy & flatness Typical Applications • Cellular • PCS • communications • radar • defense YAT-1+ Generic photo used for illustration purposes only CASE STYLE: MC1630 +RoHS Compliant The +Suffix identifies RoHS Compliance. See our web site for RoHS Compliance methodologies and qualifications General Description YAT-1+ is a 1-dB absorptive attenuator fabricated using highly repetitive MMIC process including thin film resistors on GaAs substrate. YAT-1+ attenuator die contains through-wafer Cu metallization vias to realize low thermal resistance and wideband operation.