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XU1005-BD - GaAs MMIC Transmitter

Description

Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id1,2,3) Gate Bias Voltage (Vg) Input Power (IF Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +6.0 VDC 250,150,250 mA +0.3 VDC 0.0 dBm -65 to +165 OC -55 to MTTF Table 1 MTTF Table 1 (1) Channel tem

Features

  • Integrated Mixer, LO Buffer and Output Amplifier 8 dB Conversion Gain 15 dB Image Rejection +17 dBm OIP3 +6 dBm LO Drive Level -12 dBm LO Leakage Power 100% On-Wafer RF and DC Testing 100% Visual Inspection to MIL-STD-883 Method 2010 XU1005-BD Mimix Broadband's 10.0-18.0 GHz GaAs MMIC transmitter provides +17 dBm output third order intercept and 15 dB image rejection across the band. This device is an image reject, balanced mixer followed by a two stage output amplifier. The image reject mixer.

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Datasheet Details

Part number XU1005-BD
Manufacturer Mimix Broadband
File Size 366.06 KB
Description GaAs MMIC Transmitter
Datasheet download datasheet XU1005-BD Datasheet

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Full PDF Text Transcription

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10.0-18.0 GHz GaAs MMIC Transmitter March 2007 - Rev 01-Mar-07 U1005-BD Chip Device Layout Features Integrated Mixer, LO Buffer and Output Amplifier 8 dB Conversion Gain 15 dB Image Rejection +17 dBm OIP3 +6 dBm LO Drive Level -12 dBm LO Leakage Power 100% On-Wafer RF and DC Testing 100% Visual Inspection to MIL-STD-883 Method 2010 XU1005-BD Mimix Broadband's 10.0-18.0 GHz GaAs MMIC transmitter provides +17 dBm output third order intercept and 15 dB image rejection across the band. This device is an image reject, balanced mixer followed by a two stage output amplifier. The image reject mixer reduces the need for unwanted sideband filtering before the power amplifier. I and Q mixer inputs are provided and an external 90 degree hybrid is required to select the desired sideband.
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