XM1004-BD - GaAs MMIC Balanced Mixer

Datasheet Summary

Description

XM1004-BD Absolute Maximum Ratings Gate Bias Voltage (Vg) Input Power (IF Pin) Storage Temperature (Tstg) Operating Temperature (Ta) +0.3 VDC +20.0 dBm -65 to +165 OC -55 to +125 OC Electrical Characteristics (Ambient Temperature T = 25o C) Parameter Frequency Range (RF) Upper Side Band Frequency

Features

Fundamental Balanced Mixer 8.0 dB Conversion Loss +25.0 dBm Input Third Order Intercept (IIP3) 35.0 dB LO to RF Isolation 100% On-Wafer RF Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Chip Device Layout Mimix Broadband’s 20.0-38.0 GHz GaAs MMIC fundamental balanced mixer has been optimized for use as an up-converter. The device has a conversion loss of 8.0 dB with a +25.0 dBm input third order intercept point. IF and IF mixer inputs are provided through an external 180 degree hybr.

Mimix Broadband

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Datasheet Details

Part number	XM1004-BD
Manufacturer	Mimix Broadband
File Size	176.14 KB
Description	GaAs MMIC Balanced Mixer
Datasheet	XM1004-BD Datasheet
Additional preview pages of the XM1004-BD datasheet.

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Full PDF Text Transcription

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20.0-38.0 GHz GaAs MMIC Balanced Mixer February 2007 - Rev 26-Feb-07 M1004-BD Features Fundamental Balanced Mixer 8.0 dB Conversion Loss +25.0 dBm Input Third Order Intercept (IIP3) 35.0 dB LO to RF Isolation 100% On-Wafer RF Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Chip Device Layout Mimix Broadband’s 20.0-38.0 GHz GaAs MMIC fundamental balanced mixer has been optimized for use as an up-converter. The device has a conversion loss of 8.0 dB with a +25.0 dBm input third order intercept point. IF and IF mixer inputs are provided through an external 180 degree hybrid. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity.

Published: May 25, 2007 |