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MYXB21200-20GAB - SiC Power BJT Double

Product Overview

Micross

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MYXB21200-20GAB SiC Power BJT Double by Micross - Datasheet Preview — Datasheet preview – MYXB21200-20GAB

Datasheet Details

Part number	MYXB21200-20GAB
Manufacturer	Micross
File Size	300.47 KB
Description	SiC Power BJT Double
Datasheet	MYXB21200-20GAB Datasheet
Additional preview pages of the MYXB21200-20GAB datasheet.

Product details

Features

PBreondeufitcst Overview.
Two devices in one hermetic package. ar y.
High voltage 1200V isolation in a small package outline.
High current 20A.
High temperature 210OC Appliicnations.
RoHS compliant.
HMP solder tinned leads available.
Electrically isolated flange / case relim.
Silicon Carbide (SiC) device, gives a superior high temperature performance.
Fast temperature independent switching.
Screening.

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Published: Jan 8, 2017 |