2N3958
FEATURES
LOW DRIFT LOW LEAKAGE LOW NOISE ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) |∆ VGS1‐2 /∆T|= 5µV/°C max. IG = 20p A TYP. en = 10n V/√Hz TYP.
2N3958 Applications:
- - Wideband Differential Amps High Input Impedance Amplifiers
Maximum Temperatures Storage Temperature ‐65°C to +200°C Operating Junction Temperature +150°C Maximum Voltage and Current for Each Transistor - Note 1 ‐VGSS Gate Voltage to Drain or Source 60V ‐VDSO Drain to Source Voltage 60V ‐IG(f) Gate Forward Current 50m A Maximum Power Dissipation Device Dissipation @ Free Air - Total 400m W @ 25°C MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED SYMBOL CHARACTERISTICS VALUE UNITS CONDITIONS | V GS1‐2 / T| max. DRIFT VS. 100 µV/°C VDG=20V, ID=200µA TEMPERATURE TA=‐55°C to +125°C | V GS1‐2 | max. OFFSET VOLTAGE 25 m V VDG=20V, ID=200µA MAX. ‐‐ ‐‐ 3000 1000 3 5 5 4.5 4 50 50 ‐‐ 100 5 1 0.1 ‐‐ ‐‐ 0.5 15 6 ...
