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MS2475 - RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

General Description

The MS2475 is a silicon NPN power transistor designed for IFF applications.

The MS2475 is designed to exceed the high peak power requirements of today's IFF systems.

Hermetic sealing, gold metalization and internal input matching provide superior long term reliability and broadband performance.

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Full PDF Text Transcription for MS2475 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MS2475. For precise diagrams, and layout, please refer to the original PDF.

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS2475 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features • • • • • • •...

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F & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features • • • • • • • DESIGNED FOR HIGH POWER PULSED IFF 720 WATTS (min.) IFF 1030 or 1090 MHz REFRACTORY GOLD METALLIZATION 6.8 dB MIN. GAIN LOW THERMAL RESISTANCE FOR RELIABILTY AND RUGGEDNESS 30:1 LOAD VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS INPUT MATCHED, COMMON BASE CONFIGURATION DESCRIPTION: The MS2475 is a silicon NPN power transistor designed for IFF applications. The MS2475 is designed to exceed the high peak power requirements of today's IFF systems. Hermetic sealing, gold metalization and internal input matching provide superior long term reliability and