2N3867S
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //.microsemi.
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
PNP SILICON LOW POWER TRANSISTOR
Qualified per MIL-PRF-19500/350
DEVICES
2N3867 2N3868
2N3867S 2N3868S
LEVELS
JAN JANTX JANTXV JANS
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current Total Power Dissipation
@ TA = +25°C (1)
Operating & Storage Junction Temperature Range
Symbol 2N3867 2N3868
VCBO VCEO VEBO
IC PT TJ, Tstg
-65 to +200
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Symbol
Max.
Thermal Resistance, Junction-to-Ambient
RθJA
Note:
- Electrical characteristics for “S” suffix devices are identical to the “non S” corresponding devices. 1/ Derate linearly...
