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2N3506 - NPN MEDIUM POWER SILICON TRANSISTOR

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Microsemi

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2N3506 NPN MEDIUM POWER SILICON TRANSISTOR by Microsemi - Datasheet Preview — Datasheet preview – 2N3506

Datasheet Details

Part number	2N3506
Manufacturer	Microsemi
File Size	264.88 KB
Description	NPN MEDIUM POWER SILICON TRANSISTOR
Datasheet	2N3506 Datasheet
Additional preview pages of the 2N3506 datasheet.

Product details

Description

This family of 2N3506 through 2N3507A high-frequency, epitaxial planar transistors feature low saturation voltage.

Features

JEDEC registered 2N3506 through 2N3507A series.
RoHS compliant versions available (commercial grade only).
VCR(sat) = 0.5 V @ IC = 500 mA.
Rise time tr = 30 ns max @ IC = 1.5 A, IB1 = 150 mA.
Fall time tf = 35 ns max @ IC = 1.5 A, IB1 = IB2 = 150 mA.

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Other Datasheets by Microsemi

2N3506A - NPN MEDIUM POWER SILICON TRANSISTOR
2N3506AL - NPN MEDIUM POWER SILICON TRANSISTOR
2N3507 - NPN MEDIUM POWER SILICON TRANSISTOR
2N3507A - NPN MEDIUM POWER SILICON TRANSISTOR
2N3507AL - NPN MEDIUM POWER SILICON TRANSISTOR
2N3507L - NPN MEDIUM POWER SILICON TRANSISTOR

Published: May 16, 2017 |