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2N222A - SWITCHING TRANSISTOR NPN SILICON

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N222A DIE A Microsemi Company 580 Pleasant St. Watertown, MA 02172 Phone: 617-924-9280 Fax: 617-924-1235 DIE SPECIFICATION SWITCHING TRANSISTOR NPN SILICON FEATURES: n ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/255 n AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS n GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS n LOW VCE(sat): .3V @ IC = 150 mAdc PHYSICAL DIMENSIONS Absolute Maximum Ratings: Symbol Vceo Vcbo Vebo Ic Tj, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current- Continuous Operating Junction & Storage Temperature Range Limit 50 75 6.
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