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1011GN-125E - Earless Driver GaN Transistor

Product Overview

Microsemi

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1011GN-125E Earless Driver GaN Transistor by Microsemi - Datasheet Preview — Datasheet preview – 1011GN-125E

Datasheet Details

Part number	1011GN-125E
Manufacturer	Microsemi
File Size	524.64 KB
Description	Earless Driver GaN Transistor
Datasheet	1011GN-125E Datasheet
Additional preview pages of the 1011GN-125E datasheet.

Product details

Features

1030-1090MHz.
125W Pulsed Output Power.
128µs-1mS, 10% Pulsing.
Common Source.
Class AB.
50VDD Bias Voltage.
>70% Efficiency Across the Frequency Band.
Extremely Compact Size.
18.7 dB Typical Power Gain.
0.1 dB Typical Excellent Gain Flatness.
IFF, Mode-S, TCAS Avionics Secondary Radars.
All gold metallization and eutectic die attach for highest reliability.
50Ω in/out lumped element very small footprint plug & pla.

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Published: Nov 30, 2024 |