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SD1070 - RF & MICROWAVE TRANSISTORS

General Description

KEY

Key Features

  • W W W . Microsemi . COM This silicon epitaxial NPN planar high frequency transistor employs a multi emitter electrode design. This feature together with a heavily diffused base matrix located between the individual emitters results in high RF current handling capability, high power gain, low base resistance and low output capacitance. These transistors are intended for Class A, B, or C amplifier, oscillator or frequency multiplier circuits and are specifically designed for operation in the VHF.

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Other Datasheets by Microsemi (now Microchip Technology)

Part Number Description
SD1012-03 RF & MICROWAVE TRANSISTORS
SD1013-3 RF & MICROWAVE TRANSISTORS 108-152 MHz APPLICATIONS
SD1014-02 RF & MICROWAVE Transistors
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SD1018 RF & MICROWAVE TRANSISTORS
SD1019 RF & MICROWAVE TRANSISTORS 108-152 MHz APPLICATIONS
SD1224 RF & MICROWAVE TRANSISTORS
SD1224-10 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
SD1224-2 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
SD1272 RF & MICROWAVE TRANSISTORS

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SD1070 RF & MICROWAVE TRANSISTORS RF PRODUCTS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES W W W . Microsemi . COM This silicon epitaxial NPN planar high frequency transistor employs a multi emitter electrode design. This feature together with a heavily diffused base matrix located between the individual emitters results in high RF current handling capability, high power gain, low base resistance and low output capacitance. These transistors are intended for Class A, B, or C amplifier, oscillator or frequency multiplier circuits and are specifically designed for operation in the VHF-UHF region. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com ! ! ! ! ! ! 130 - 400 MHz 28 Volts High Power Gain High Efficiency Common Emitter POUT = 13.