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TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/526 Devices
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Qualified Level JANTX JANTXV
2N3879
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TC = 250C (1) Operating & Storage Junction Temperature Range
Symbol
VCEO VCBO VEBO IB IC PT TJ, Tstg Symbol RθJC
Value
75 120 7.0 5.0 7.0 35 -65 to +200 Max. 5.0
Unit
Vdc Vdc Vdc Adc Adc W 0 C Unit 0 C/W
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 200 mW/0C for TC > 250C
TO-66* (TO-213AA)
*See Appendix A for Package Outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol V(BR)CEO ICEO ICEX ICBO IEBO Min.
JANTX2N3879 Datasheet
