The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TECHNICAL DATA
PNP SWITCHING SILICON TRANSISTOR
Qualified per MIL-PRF-19500/350 Devices
www.DataSheet4U.com 2N3867
Qualified Level 2N3868 2N3868S JAN JANTX JANTXV
2N3867S
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Total Power Dissipation @ TA = 250C(1) @ TC = 250C(2) Operating & Storage Temperature Range
Symbol
VCEO VCBO VEBO IC PT TOP, TSTG Symbol RθJC
2N3867 2N3867S
40 40
2N3868 2N3868S
60 60
Unit
Vdc Vdc Vdc Adc W W 0 C Unit C/W
4.0 3.0 1.0 10 -55 to +200 Max. 17.5
TO-5* 2N3867, 2N3868
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 5.71 mW/0C for TA > +250C 2) Derate linearly 57.