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TECHNICAL DATA
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/253 Devices
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Qualified Level JAN JANTX JANTXV
2N930
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation
Symbol
VCEO VCBO VEBO IC PT TJ, Tstg Symbol RθJC
Value
45 60 6.0 30 300 600 -55 to +200 Max. 97
Units
Vdc Vdc Vdc mAdc mW
0
@ TA = +250C(1) @ TC = +250C(2) Operating & Storage Junction Temperature Range
C
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 2.0 mW/0C above TA = +250C 2) Derate linearly 4.
JAN2N930 Datasheet
