2N6691 - (2N66xx) NPN POWER SILICON TRANSISTOR

Microsemi (now Microchip Technology)

Datasheet Details

Part number	2N6691
Manufacturer	Microsemi (now Microchip Technology)
File Size	59.64 KB
Description	(2N66xx) NPN POWER SILICON TRANSISTOR
Datasheet	2N6691 Datasheet

Other Datasheets by Microsemi (now Microchip Technology)

Part Number	Description
2N6690	NPN POWER SILICON TRANSISTOR
2N6693	(2N66xx) NPN POWER SILICON TRANSISTOR
2N6648	PNP DARLINGTON POWER SILICON TRANSISTOR
2N6649	PNP DARLINGTON POWER SILICON TRANSISTOR
2N6650	PNP DARLINGTON POWER SILICON TRANSISTOR
2N6674	NPN POWER SILICON TRANSISTOR
2N6675	NPN POWER SILICON TRANSISTOR
2N6676	(2N66xx) NPN POWER SILICON TRANSISTOR
2N6678	(2N66xx) NPN POWER SILICON TRANSISTOR
2N6689	NPN POWER SILICON TRANSISTOR

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TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/538 Devices 2N6676 2N6678 2N6691 2N6693 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Symbol VCEO VCBO VCEX VEBO IB IC 2N6676 2N6678 2N6691 2N6693 300 400 450 650 450 650 8.0 5.0 15 2N6676 2N6691 2N6678 2N6693 6.0(2) 3.0(3) 175 175 -65 to +200 Max. 1.0 Unit Vdc Vdc Vdc Vdc Adc Adc 2N6676, 2N6678 TO-3 (TO-204AA)* @ TA = 250C @ TC = 250C(1) Operating & Storage Junction Temperature Range Total Power Dissipation PT Top; Tstg Symbol RθJC W W 0 C Unit C/W THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 1.