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2N4930 - PNP HIGH VOLTAGE SILICON TRANSISTOR

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TECHNICAL DATA PNP HIGH VOLTAGE SILICON TRANSISTOR Qualified per MIL-PRF-19500/397 Devices 2N3743 2N4930 2N4931 Qualified Level JAN, JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Sym VCEO VCBO VEBO IC PT TJ, Tstg 2N3743 2N4930 2N4931 Unit 300 300 200 250 200 250 5.0 200 1.0 5.0 -65 to +200 Vdc Vdc Vdc mAdc W W 0 C Unit C/W @TA = +250C 1 @TC = +250C 2 Operating & Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristics Symbol Thermal Resistance Junction-to-Case RθJC 1) Derate linearly 5.71 mW/0C for TA > +250C 2) Derate linearly 28.6 mW/0C for TC > +250C Max.
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