Datasheet4U Logo Datasheet4U.com

2731-100M - Radar

Description

The 2731-100M is an internally matched, COMMON BASE bipolar transistor capable of providing 100 Watts of pulsed RF output power at 200µs pulse width, 10% duty factor across the 2700 to 3100 MHz band.

The transistor prematch and test fixture has been optimized through the use of 10 Ohm TRL Analysis.

📥 Download Datasheet

Datasheet preview – 2731-100M

📁 Similar Datasheet

  • 2731GN-120V - Class-AB GaN-on-SiC HEMT Transistor (Microsemi)
  • 273.001 - Axial Lead and Cartridge Fuses (Littelfuse)
  • 273.002 - Axial Lead and Cartridge Fuses (Littelfuse)
  • 273.003 - Axial Lead and Cartridge Fuses (Littelfuse)
  • 273.004 - Axial Lead and Cartridge Fuses (Littelfuse)
  • 273.005 - Axial Lead and Cartridge Fuses (Littelfuse)
  • 273.01 - Axial Lead and Cartridge Fuses (Littelfuse)
  • 273.01.5 - Axial Lead and Cartridge Fuses (Littelfuse)
  • 273.015 - Axial Lead and Cartridge Fuses (Littelfuse)
  • 273.031 - Axial Lead and Cartridge Fuses (Littelfuse)
Other Datasheets by Microsemi Corporation

    Full PDF Text Transcription

    Click to expand full text
    2731-100MR3 2731-100M 100 Watts, 36 Volts, 200µs, 10% Radar 2700-3100 MHz GENERAL DESCRIPTION The 2731-100M is an internally matched, COMMON BASE bipolar transistor capable of providing 100 Watts of pulsed RF output power at 200µs pulse width, 10% duty factor across the 2700 to 3100 MHz band. The transistor prematch and test fixture has been optimized through the use of 10 Ohm TRL Analysis. This ceramic sealed transistor is specifically designed for S-band radar applications. It utilizes gold metallization and emitter ballasting to provide high reliability and supreme ruggedness.
    Published: |