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RC28F128M29EWLA - Parallel NOR Flash Embedded Memory

This page provides the datasheet information for the RC28F128M29EWLA, a member of the RC28F128M29EWXX Parallel NOR Flash Embedded Memory family.

Datasheet Summary

Description

8 Signal Assignments 9 Signal Descriptions 13 Memory Organization 14 Memory Configuration 14 Memory Map 32Mb 15 Memory Map 64Mb 17 Memory Map 128Mb 19 Bus Operations 20 Read 20 Write 20 Standby 20 Output Disable 21 Reset 21 Registers 22 Status Register 2

Features

  • Parallel NOR Flash Embedded Memory JR28F032M29EWXX; PZ28F032M29EWXX; JS28F064M29EWXX PC28F064M29EWXX; JR28F064M29EWXX; PZ28F064M29EWXX JS28F128M29EWXX; PC28F128M29EWXX; RC28F128M29EWXX Features.
  • Supply voltage.
  • VCC = 2.7.
  • 3.6V (program, erase, read).
  • VCCQ = 1.65.
  • 3.6V (I/O buffers).
  • Asynchronous random or page read.
  • Page size: 8 words or 16 bytes.
  • Page access: 25ns.
  • Random access: 60ns (BGA); 70ns (TSOP).
  • Buff.

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Datasheet preview – RC28F128M29EWLA

Datasheet Details

Part number RC28F128M29EWLA
Manufacturer Micron
File Size 1.04 MB
Description Parallel NOR Flash Embedded Memory
Datasheet download datasheet RC28F128M29EWLA Datasheet
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Full PDF Text Transcription

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32Mb, 64Mb, 128Mb: 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory JR28F032M29EWXX; PZ28F032M29EWXX; JS28F064M29EWXX PC28F064M29EWXX; JR28F064M29EWXX; PZ28F064M29EWXX JS28F128M29EWXX; PC28F128M29EWXX; RC28F128M29EWXX Features • Supply voltage – VCC = 2.7–3.6V (program, erase, read) – VCCQ = 1.65–3.6V (I/O buffers) • Asynchronous random or page read – Page size: 8 words or 16 bytes – Page access: 25ns – Random access: 60ns (BGA); 70ns (TSOP) • Buffer program: 256-word MAX program buffer • Program time – 0.56µs per byte (1.8 MB/s TYP when using 256word buffer size in buffer program without V PPH) – 0.31µs per byte (3.
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