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NP8P128AE3BSM60E - P8P Parallel Phase Change Memory

Download the NP8P128AE3BSM60E datasheet PDF. This datasheet also covers the NP8P128A13BSM60E variant, as both devices belong to the same p8p parallel phase change memory family and are provided as variant models within a single manufacturer datasheet.

Description

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Features

  • P8P Parallel Phase Change Memory (PCM) Features.
  • High-performance READ.
  • 115ns initial READ access.
  • 135ns initial READ access.
  • 25ns, 8-word asynchronous-page READ.
  • Architecture.
  • Asymmetrically blocked architecture.
  • Four 32KB parameter blocks with top or bottom configuration.
  • 128KB main blocks.
  • Serial peripheral interface (SPI) to enable lower pin count on-board programming.
  • Phase change memory (PCM).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NP8P128A13BSM60E-Micron.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Micron Technology

Part Number Description
NP8P128AE3B1760E P8P Parallel Phase Change Memory
NP8P128AE3T1760E P8P Parallel Phase Change Memory
NP8P128AE3TSM60E P8P Parallel Phase Change Memory
NP8P128A13B1760E P8P Parallel Phase Change Memory
NP8P128A13BSM60E P8P Parallel Phase Change Memory

Full PDF Text Transcription

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128Mb: P8P Parallel PCM Features P8P Parallel Phase Change Memory (PCM) Features • High-performance READ – 115ns initial READ access – 135ns initial READ access – 25ns, 8-word asynchronous-page READ • Architecture – Asymmetrically blocked architecture – Four 32KB parameter blocks with top or bottom configuration – 128KB main blocks – Serial peripheral interface (SPI) to enable lower pin count on-board programming • Phase change memory (PCM) – Chalcogenide phase change storage element – Bit-alterable WRITE operation • Voltage and power – VCC (core) voltage: 2.7–3.6V – VCCQ (I/O) voltage: 1.7–3.
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