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MT53B256M32D1 - Mobile LPDDR4 SDRAM

Key Features

  • Mobile LPDDR4 SDRAM MT53B256M32D1, MT53B512M32D2, MT53B1024M32D4 Features.
  • Ultra-low-voltage core and I/O power supplies.
  • VDD1 = 1.70.
  • 1.95V; 1.8V nominal.
  • VDD2/VDDQ = 1.06.
  • 1.17V; 1.10V nominal.
  • Frequency range.
  • 1600.
  • 10 MHz (data rate range: 3200.
  • 20 Mb/s/ pin).
  • 16n prefetch DDR architecture.
  • 2-channel partitioned architecture for low RD/WR energy and low average latency.
  • 8 internal banks per.

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Other Datasheets by Micron Technology

Part Number Description
MT53B1024M32D4 Mobile LPDDR4 SDRAM
MT53B512M32D2 Mobile LPDDR4 SDRAM
MT53E128M16D1 LPDDR4/LPDDR4X SDRAM
MT53E128M32D2 LPDDR4/LPDDR4X SDRAM
MT53E1536M32D4 LPDDR4X/LPDDR4 SDRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Micron Confidential and Proprietary Preliminary‡ 200b: x32 Mobile LPDDR4 SDRAM Features Mobile LPDDR4 SDRAM MT53B256M32D1, MT53B512M32D2, MT53B1024M32D4 Features • Ultra-low-voltage core and I/O power supplies – VDD1 = 1.70–1.95V; 1.8V nominal – VDD2/VDDQ = 1.06–1.17V; 1.