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MT38M5041A3034EZZI.XR6 - Parallel NOR and PSRAM 56-Ball MCP Combination Memory

Download the MT38M5041A3034EZZI.XR6 datasheet PDF. This datasheet also covers the MT38M4041A3034EZZI.XK6 variant, as both devices belong to the same parallel nor and psram 56-ball mcp combination memory family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Parallel NOR and PSRAM 56-Ball MCP Combination Memory MT38M4041A3034EZZI. XK6 MT38M5041A3034EZZI. XR6 Features.
  • Micron® Parallel NOR Flash and PSRAM components.
  • RoHS-compliant, “green” package.
  • Multiplexed address/data bus.
  • Deep power-down (DPD) mode on both devices.
  • NOR: 2μA (TYP).
  • PSRAM: 10μA (TYP).
  • Space-saving multichip package (MCP).
  • Low-voltage operation (1.70.
  • 1.95V).
  • Industrial temperature range:.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MT38M4041A3034EZZI.XK6-Micron.pdf) that lists specifications for multiple related part numbers.

Other Datasheets by Micron Technology

Part Number Description
MT38M4041A3034EZZI.XK6 Parallel NOR and PSRAM 56-Ball MCP Combination Memory
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MT38W1011A90YZQXZI.XB8 Parallel NOR and PSRAM 88-Ball MCP Combination Memory
MT38W2011A501ZQXZI.X68 Parallel NOR and PSRAM 88-Ball MCP Combination Memory
MT38W2011A901ZQXZI.X68 Parallel NOR and PSRAM 88-Ball MCP Combination Memory
MT38W2011A90YZQXZI.X68 Parallel NOR and PSRAM 88-Ball MCP Combination Memory
MT36HTF1G72FZ DDR2 SDRAM FBDIMM
MT36HTF1G72PZ DDR2 SDRAM RDIMM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
56-Ball MCP: 256Mb/512Mb Parallel NOR and 128Mb PSRAM Features Parallel NOR and PSRAM 56-Ball MCP Combination Memory MT38M4041A3034EZZI.XK6 MT38M5041A3034EZZI.XR6 Features • Micron® Parallel NOR Flash and PSRAM components • RoHS-compliant, “green” package • Multiplexed address/data bus • Deep power-down (DPD) mode on both devices – NOR: 2μA (TYP) – PSRAM: 10μA (TYP) • Space-saving multichip package (MCP) • Low-voltage operation (1.70–1.95V) • Industrial temperature range: –40°C to +85°C NOR Flash-Specific Features • 256Mb or 512Mb multiple-bank, Parallel NOR Flash • Synchronous/asynchronous read – Synchronous burst reads: 133 MHz (266MB/sec) – Random access times: 96ns • Programming times – 2.0 μs/word (TYP) buffered programming – 0.