MT29F64G08CECCB Datasheet NAND Flash Memory

Manufacturer: Micron Technology

Download the MT29F64G08CECCB datasheet PDF. This datasheet also includes the MT29F32G08CBACA variant, as both parts are published together in a single manufacturer document.

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MT29F64G08CECCB nand flash memory by Micron Technology - Datasheet Preview — Note: The manufacturer provides a single datasheet file (MT29F32G08CBACA-Micron.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	MT29F64G08CECCB
Manufacturer	Micron Technology
File Size	3.14 MB
Description	NAND Flash Memory
Datasheet	MT29F64G08CECCB Datasheet

Overview

New Product VTS40100CT, VF40100C, VB40100C & VI40100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.

Key Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Low thermal resistance 2 VTS40100CT PIN 1 PIN 3 PIN 2 CASE 3 1 VF40100C PIN 1 PIN 3 PIN 2 2 3 1.
Meets MSL level 1, per J-STD-020C, LF max peak of 245 °C (for TO-263AB package).
Solder dip 260 °C, 40 seconds (for TO-220AB, ITO-220AB & TO-262AA package).
Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC.

More Datasheets from Micron Technology

Part Number	Description
MT29F64G08CECBB	NAND Flash Memory
MT29F64G08CEAAA	NAND Flash Memory
MT29F64G08CEACA	NAND Flash Memory
MT29F64G08CABA	NAND Flash Memory
MT29F64G08CBAAA	NAND Flash Memory
MT29F64G08CBAAB	NAND Flash Memory
MT29F64G08CBCAB	NAND Flash Memory
MT29F64G08CFAAA	NAND Flash Memory
MT29F64G08CFABB	NAND Flash Memory
MT29F64G08CFACA	NAND Flash Memory