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MT58L1MY18D - (MT58xxxx) 16Mb SYNCBURST SRAM

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Micron Technology

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MT58L1MY18D (MT58xxxx) 16Mb SYNCBURST SRAM by Micron Technology - Datasheet Preview — Datasheet preview – MT58L1MY18D

Datasheet Details

Part number	MT58L1MY18D
Manufacturer	Micron Technology
File Size	526.57 KB
Description	(MT58xxxx) 16Mb SYNCBURST SRAM
Datasheet	MT58L1MY18D Datasheet
Additional preview pages of the MT58L1MY18D datasheet.

Product details

Description

The Micron® SyncBurst™ SRAM family employs highspeed, low-power CMOS designs that are fabricated using an advanced CMOS process.

Features

Fast clock and OE# access times.
Single +3.3V ±0.165Vor 2.5V ±0.125V power supply (VDD).
Separate +3.3V or 2.5V isolated output buffer supply (VDDQ).
SNOOZE MODE for reduced-power standby.
Common data inputs and data outputs.
Individual BYTE WRITE control and GLOBAL WRITE.
Three chip enables for simple depth expansion and address pipelining.
Clock-controlled and registered addresses, data I/Os and control signals.

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Published: Jan 4, 2006 |