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MT16LD864A - (MT16LDxx64A) DRAM MODULE

Download the MT16LD864A datasheet PDF. This datasheet also covers the MT16LD1664A variant, as both devices belong to the same (mt16ldxx64a) dram module family and are provided as variant models within a single manufacturer datasheet.

General Description

The Micron® MT8LD864A X, MT16LD1664A X and MT32LD3264A X are randomly accessed 64MB, 128MB and 256MB memories organized in a x64 configuration.

They are specially processed to operate from 3V to 3.6V for low-voltage memory systems.

Key Features

  • Eight-CAS# ECC pinout in a 168-pin, dual in-line memory module (DIMM).
  • 64MB (8 Meg x 64), 128MB (16 Meg x 64), and 256MB (32 Meg x 64).
  • Nonbuffered.
  • High-performance CMOS silicon-gate process.
  • Single +3.3V ±0.3V power supply.
  • All inputs, outputs and clocks are LVTTLcompatible.
  • 4,096-cycle CAS#-BEFORE-RAS# (CBR) refresh distributed across 64ms.
  • Extended Data-Out (EDO) PAGE MODE access cycle.
  • Serial presence-detect (.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MT16LD1664A_MicronTechnology.pdf) that lists specifications for multiple related part numbers.

Other Datasheets by Micron Technology

Part Number Description
MT16LD1664A (MT16LDxx64A) DRAM MODULE
MT16LD3264A (MT16LDxx64A) DRAM MODULE
MT16LSDT1664A (MT16LSDT864A / MT16LSDT1664A) SDRAM DIMMs
MT16LSDT6464A SYNCHRONOUS DRAM MODULE
MT16LSDT864A (MT16LSDT864A / MT16LSDT1664A) SDRAM DIMMs
MT16D132 1 MEG x 32 DRAM MODULES
MT16D232 2Meg x 32 DRAM
MT16D232 DRAM Module
MT16D232x 1 Meg / 2 Meg x 32 DRAM Module
MT16MTF1G64HZ 1.35V DDR3L-RS SDRAM SODIMM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com 8, 16, 32 MEG x 64 NONBUFFERED DRAM DIMMs DRAM MODULE FEATURES • Eight-CAS# ECC pinout in a 168-pin, dual in-line memory module (DIMM) • 64MB (8 Meg x 64), 128MB (16 Meg x 64), and 256MB (32 Meg x 64) • Nonbuffered • High-performance CMOS silicon-gate process • Single +3.3V ±0.3V power supply • All inputs, outputs and clocks are LVTTLcompatible • 4,096-cycle CAS#-BEFORE-RAS# (CBR) refresh distributed across 64ms • Extended Data-Out (EDO) PAGE MODE access cycle • Serial presence-detect (SPD) MT8LD864A X, MT16LD1664A X, MT32LD3264A X For the latest data sheet, please refer to the Micron Web site: www.micronsemi.com/datasheets/datasheet.