VN4012 - N-Channel Vertical DMOS FET

Datasheet Summary

Description

The VN4012 Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process.

Features

Free from Secondary Breakdown.
Low Power Drive Requirement.
Ease of Paralleling.
Low CISS and Fast Switching Speeds.
Excellent Thermal Stability.
Integral Source-Drain Diode.
High Input Impedance and High Gain.

Microchip

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Datasheet Details

Part number	VN4012
Manufacturer	Microchip
File Size	725.84 KB
Description	N-Channel Vertical DMOS FET
Datasheet	VN4012 Datasheet
Additional preview pages of the VN4012 datasheet.

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VN4012 N-Channel Enhancement-Mode Vertical DMOS FET Features • Free from Secondary Breakdown • Low Power Drive Requirement • Ease of Paralleling • Low CISS and Fast Switching Speeds • Excellent Thermal Stability • Integral Source-Drain Diode • High Input Impedance and High Gain Applications • Motor Controls • Converters • Amplifiers • Switches • Power Supply Circuits • Drivers (Relays, Hammers, Solenoids, Lamps, Memories, Displays, Bipolar Transistors, etc.) General Description The VN4012 Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process.

Published: Jan 22, 2024 |