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MSC400SMA330B4 - SiC N-Channel Power MOSFET

Key Features

  • The following are key features of the MSC400SMA330B4 device:.
  • Low capacitances and low gate charge.
  • Fast switching speed due to low internal gate resistance (ESR).
  • Stable operation at high junction temperature, TJ(max) = 150 °C.
  • Fast and reliable body diode.
  • Superior avalanche ruggedness.
  • RoHS compliant Benefits The following are benefits of the MSC400SMA330B4 device:.
  • High efficiency to enable lighter, more compact system.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MSC400SMA330B4 3300 V, 400 mΩ SiC N-Channel Power MOSFET Product Overview The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC400SMA330B4 device is a 3300 V, 400 mΩ SiC MOSFET in a TO-247 4-lead package with a source sense.